Charge Transfer at Nanocrystalline Metal Oxide Semiconductor/Solution Interfaces Studied by Photoacoustic Spectroscopy

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Charge Transfer at Nanocrystalline Metal Oxide Semiconductor/Solution Interfaces Studied by Photoacoustic Spectroscopy

Svetlana Leytner and Joseph T. Hupp

Department of Chemistry

Northwestern University

Evanston, IL 60208

Objective: Direct evaluation of interfacial reaction energetics

Approach: Time-Resolved Interfacial Photoacoustic Spectroscopy (TRPAS): technique development and application

Targets: Electron transfer reactions in nanocrystalline metal oxide semiconductor/inorganic dye systems; trap-state energetics by direct band gap excitation

Electron Transfer in Nanocrystalline Metal Oxide Semiconductor/Inorganic Dye Systems

Emission Spectra of Os(5-Cl-phen)₃²⁺

Neat and Bound

Photoacoustic Technique

Conclusions

Photoacoustic spectroscopy used to probe back electron transfer energetics at metal oxide semiconductor/solution interfaces

Direct fast back electron transfer from the conduction band, slow back electron transfer from the trapped states

Photoacoustic spectroscopy used to probe semiconductor trap state energetics

Acknowledgments

4 Dennis Gaal

$$ Office of Naval Research

$$ NSF Institute for Environmental Catalysis

at Northwestern University